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Next Generation DRAM Temperature Requirements and Impacts to Full Wafer Contactor Probe Card |

Traditional DRAM devices for server, mobile and commercial application require wafer test temp range from -25oC to 10oC for cold, up to 85oC to 105oC for hot test. Emerging new devices for automotive, industrial and military applications require increased test temp range from -40oC to 125 oC and higher. DRAM probe card solutions for volume production are based on 300mm, full wafer contact architectures to support 1TD solutions. Expansion and contraction of the 300mm wafer for these increased temperature ranges create significant challenges for full wafer contactor probe cards including CTE matching to the movement of the full 300mm wafer. In addition, requirements are trending for smaller pad pitch and smaller pad size increases the probing challenges to be solved. Probe card solutions not only need to satisfy the challenges of reduced pad pitch, pad size and increase temperature range but also must consider PCB component selection and strategic component placement, chuck movement time and strategies to maintain probe card thermal stability. This presentation will review emerging market drivers, impacts to probe card requirements/challenges and 300mm full wafer contactor solutions.

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