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Next Generation KGD Memory Test Achieved Wafer Level Speed Beyond 3GHz
Recent industry wide adoption of heterogeneous integrated system enabled by 2.5D and 3D advanced packaging technology is driving up the demand for known-good-die (KGD) and known-good-stacked-die (KGSD). Coupled with the advancement on DRAM and High Bandwidth Memory (HBM) native speed capability, the latest memory is running beyond 2GHz (4Gbps) which is pushing the limit on existing ATE testers. Recent joint effort between SK Hynix, FormFactor, and Advantest successfully demonstrated that beyond 3GHz is achievable. This session discusses the design challenges overcame in this collaboration from a system level signal integrity and power delivery perspective.
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Next Generation KGD Memroy Test Achieved Wafer Level Speed Beyond 3GHz - Copy.pdf | Download |