October 30, 2026
AI datacenter connectivity is pushing optical lanes to 448 Gb/s. Here’s why production wafer test now needs to reach 120 GHz, and how to join FormFactor’s November 12 webinar.
AI infrastructure is driving the transition from 800G to 1.6T and ultimately 3.2T Ethernet. As optical interfaces get faster, device bandwidth requirements are moving beyond 112 GHz, driving production wafer test toward 120 GHz.
That is the challenge behind FormFactor’s upcoming webinar, Extending Production Wafer Test to 120 GHz for the 3.2T Era: Supporting the Evolution of AI Datacenter Connectivity.
Why is wafer test moving to 120 GHz?
The need for higher-frequency wafer test starts with the evolution of high-speed electrical interfaces. Future 448 Gb/s PAM4 interfaces require test capability beyond 112 GHz, which is extending wafer-level RF measurement into the 120 GHz range.
That creates new challenges for testing the electrical devices in the optical transceiver signal chain, including laser drivers and transimpedance amplifiers (TIAs).
Why does direct RF measurement matter?
Not every component in an optical communication system can be tested the same way. DSPs and SerDes devices can use built-in self-test. Laser drivers and TIAs are analog building blocks that require direct RF measurement.
With direct RF measurement, the probe card becomes part of the measurement path. As frequencies rise, signal integrity across that path becomes increasingly important.
What does it take to reach 120 GHz?
Extending production wafer test to 120 GHz requires looking beyond the probe tip. FormFactor’s Pyramid RF probe card architecture provides the signal-integrity foundation for this work, and FormFactor has characterized the complete connector-to-probe-tip signal path through 120 GHz.
What does that measured performance look like, and which engineering considerations matter most? The webinar covers both.
Join the webinar
Extending Production Wafer Test to 120 GHz for the 3.2T Era: Supporting the Evolution of AI Datacenter Connectivity
FormFactor’s Christopher Lemoine, Director of Product Line Management, RF & Probe Card Platforms, and Pavle Milosevic, Sr. Manager, Electrical Design Engineering, will cover:
- How AI datacenter connectivity and the transition toward 3.2T Ethernet are driving higher-speed electrical interfaces
- Why laser drivers and TIAs require direct RF measurement
- Signal-integrity challenges associated with broadband RF measurements at wafer sort
- Transmission-line design and PCB-to-membrane transition considerations
- High-frequency interconnect technologies
- How FormFactor’s Pyramid RF probe-card architecture has been extended to support next-generation production test
- Measured 120 GHz performance across the complete connector-to-probe-tip signal path
November 12, 2026
- Americas & Europe: 9:00 AM PT. Register for the Americas & Europe session.
- Asia-Pacific: 9:00 AM China Standard Time (UTC+8). Register for the Asia-Pacific session.
Choose the session that fits your time zone and register to save your spot.