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High Current Probe (HCP)
  • High Current Probe (HCP)

Designed specifically for testing power devices on wafer, the HCP probe reduces probe and device destruction at high currents by minimizing contact resistance at the wafer-to-probe interface to prevent device heating at the tip. The innovative multi-finger design distributes the current over multiple contact points at the tip and is joined by a single heatsink which pulls heat from the probe tip.

  • Enables wafer probing up to 100 A pulsed and 10A DC
  • Innovative multi-fingertip design provides even distribution of current
  • Supports up to 500 V
  • Replaceable Tungsten probe tips
  • Temperature range of -60°C to 300°C
  • Minimal contact resistance at the pad-tip junction to reduce heating during measurements, with fewer probe marks
  • Prevents against thermal runaway
  • Measure devices on wafer at higher currents than ever before
  • Small scrub minimizes damage to aluminum pad
  • Small footprint – tip fits on a 1 mm pad

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TESLA200 - 200mm High Power Probe System

The TESLA200 Advanced On-Wafer Power Semiconductor Probe System is an integrated high-power test solution that enables collection of accurate high voltage and high current measurement data, with complete operator safety.