Power devices, built with wide bandgap technologies such as GaN and SiC introduce special on-wafer probing challenges, such as operator safety, anti-arcing preventative measures for high-voltage test, and probes with low contact resistance and high current capacity. A complete test solution consists of instrument, cabling, analytical probes or probe card, and a probe system with high-power thermal chuck and robust operator safety measures – all capable of very high voltages and currents.