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Advances in Analytical Wafer Probing of High-voltage / High-current Devices

With electric vehicles and other high-power applications gaining momentum, the development of new high-voltage/high current semiconductor devices is ramping up. Wafer test of these power semiconductors poses unique challenges, with test currents of more than 500 Amps and test voltages up to 10 Kilovolts. Designers of these new devices are pushing the limits of physics by shrinking the distance between contacts and requiring test temperatures up to 200° C. In addition, new materials such as silicon carbide and gallium nitride are growing in popularity, adding new complexity to carry out testing in an environment that suppresses electrical arcing, provides low contact resistance of the probe to the device, and low contact and thermal resistance with uniformity between the wafer and chuck. Analytical and engineering probing is key in the research and development of these leading edge semiconductor technologies.

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