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Next Generation SmartMatrix Probe Card Technology Enables 3000-Parallelism 1TD Test for 1Z DRAM Process Node|

The DRAM technology process node continues to shrink, driven by the demand to increase bit density and reduce memory device cost. With the recent accelerated transition from the 1Y to 1Z process node, die count per wafer is increasing rapidly. Wafer sort throughput must advance to achieve the target cost without adding significant capital expenditure to the existing test floor. Samsung and FormFactor have been working together, and successfully developed and qualified the next generation DRAM probe card that leverages FormFactor’s ATRE technology for 3000-parallelism and beyond. FormFactor’s SmartMatrix 3000XP probe card enables remarkable high-parallelism test throughput by extending ATE tester resource sharing up to X32. This session discusses the key technology enablers of the SmartMatrix 3000XP product architecture, and the design challenges overcame during this successful collaboration.

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