Improving Probe-Tip S-parameters Measurements with Power Calibrations

Results of S-parameters measurements (up to 110 GHz) that incorporates probe-tip power calibration for wafer-level measurements are presented in this MicroApps seminar. This new instrumentation technique, ensures accurate and consistent RF source power is applied to active devices, lengthens the post-calibration stability of the system, minimizes measurement discontinuities while maximizing the measurement throughput of a 110 GHz wafer-level measurement system. Demonstrated with probe-tip source power of -20 dBm, an increased system post-calibration stability of more than 4 hours, compared to 10 minutes has been achieved, giving microwave engineers more time to test their mmW devices in a single calibration.

Created: June 25, 2019 | Updated: June 25, 2019 | Type: pdf | Size: 1.76 MB

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